IMAGE CONTRAST OF TRIPLE LOOPS IN TELLURIUM-DOPED GALLIUM ARSENIDE

被引:15
作者
LAISTER, D
JENKINS, GM
机构
[1] Department of Metallurgy, University College, Swansea, Glam, Singleton Park
来源
PHILOSOPHICAL MAGAZINE | 1969年 / 20卷 / 164期
关键词
D O I
10.1080/14786436908228707
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The contrast of the bounding partial dislocations of three-layer loops in tellurium-doped gallium arsenide has been examined in the electron microscope and compared with the calculated dislocation profiles for different diffracting conditions. The triple loops are shown to consist of three overlapping extrinsic stacking faults, each fault bounded by a Frank partial dislocation with Burgers vector b=+1/3 [lll]. © 1969 Taylor & Francis Group, LLC.
引用
收藏
页码:361 / &
相关论文
共 11 条