ENHANCED ELECTROOPTIC PROPERTIES OF LOW-TEMPERATURE-GROWTH GAAS AND ALGAAS

被引：43

作者：

NOLTE, DD

MELLOCH, MR

WOODALL, JM

RALPH, SJ

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.108677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The signal-bandwidth products of excitonic electroabsorption of low-temperature-growth (LTG) molecular beam epitaxial films of GaAs:As and Al0.25Ga0.75As:As are larger than in the related stoichiometric materials. The enhanced electro-optic properties of these composites may be caused by increased inhomogeneity of dc electric fields. The differential transmission in LTG Al0.25Ga0.75As:As annealed at 750-degrees-C for 30 s is relatively broadband and approaches 60% for dc electric fields of only 1.5 X 10(4) V/cm.

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页码：1356 / 1358

页数：3

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