Chemical pressure control of the spin-valve magnetoresistance in La1.4Sr1.6Mn2O7

被引:21
作者
Moritomo, Y [1 ]
Itoh, M
机构
[1] Nagoya Univ, CIRSE, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan
[3] JST, PRESTO, Chiyoda Ku, Tokyo 102, Japan
关键词
D O I
10.1103/PhysRevB.59.8789
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Comprehensive chemical substitution effects on the magnetic and transport properties have been investigated for single crystals of (La1-zNdz) 1.4Sr1.6Mn2O2 with bilayer structure. In this system, the Nd-doping procedure changes the ground state from ferromagnetic (FM) to antiferromagnetic (AFM), in the latter of which the FM bilayer alternates along the c axis. In the Nd-doped compounds, application of an external magnetic field (H parallel to c) induces an AFM-FM metamagnetic transition. The transition accompanies a switching-like reduction of the current-perpendicular-to-plane resistivity, which can be viewed as a spin-valve magnetoresistance (MR). We have derived magnetic phase diagrams, and discuss controllability of the spin-valve MR by chemical pressure. [S0163-1829(99)03713-3].
引用
收藏
页码:8789 / 8794
页数:6
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