Structure determination of the (√3 x √3) R30° boron phase on the Si(111) surface using photoelectron diffraction

被引：30

作者：

Baumgärtel, P

Paggel, JJ

Hasselblatt, M

Horn, K

Fernandez, V

Schaff, O

Weaver, JH

Bradshaw, AM

Woodruff, DP

Rotenberg, E

Denlinger, J

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[4] Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA

[5] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.59.13014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A quantitative structural analysis of the system Si(lll)(root 3 X root 3)R30 degrees-B has been performed using photo-electron diffraction in the scanned energy mode. We confirm that the substitutional Sg adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98(+/-0.04) Angstrom, 2.14(+/-0.13) Angstrom,and 2.21(+/-0.12) Angstrom. These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. [S0163-1829(99)05819-1].

引用

页码：13014 / 13019

页数：6

共 47 条

[1] STRUCTURE OF (SQUARE-ROOT-3 X SQUARE-ROOT-3) R 30-DEGREES-B AT THE SI INTERFACE STUDIED BY GRAZING-INCIDENCE X-RAY-DIFFRACTION [J].