Changes in the surface morphology of Ge(001) due to Sb adsorption

被引：12

作者：

Falkenberg, G

Seehofer, L

Johnson, RL

机构：

[1] II. Inst. fur Experimentalphysik, Universität Hamburg, D-22761 Hamburg

来源：

SURFACE SCIENCE | 1997年 / 377卷 / 1-3期

关键词：

antimony; chemisorption; germanium; growth; low energy electron diffraction (LEED); low index single crystal surfaces; scanning tunneling microscopy; surface relaxation and reconstruction; surface stress; surface structure; morphology; roughness; and topography;

D O I：

10.1016/S0039-6028(96)01358-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structure and morphology of Sb-covered Ge(001) surfaces has been studied with scanning tunneling microscopy and low-energy electron diffraction. After deposition of submonolayers of Sb at room temperature and annealing at 350 degrees C, the images show an interfacial mixing of symmetrical Sb dimers and Ge dimers. At saturation coverage, the (2 x I) reconstruction exhibits a high density of antiphase domain boundaries. Upon annealing at temperatures between 480 and 510 degrees C the morphology of the surface changes drastically without Sb desorption. Oriented two-dimensional islands and vacancies are formed which have distinctive shapes. The rearrangements which occur on the surface can be understood in terms of stress domains, which reduce the surface stress.

引用

页码：75 / 80

页数：6

共 13 条

[1] ADSORPTION OF AS ON STEPPED SI(100) - RESOLUTION OF THE SUBLATTICE-ORIENTATION DILEMMA [J].