STRUCTURE OF THE SB-TERMINATED SI(100) SURFACE

被引：92

作者：

NOGAMI, J ^{[1
]}

BASKI, AA ^{[1
]}

QUATE, CF ^{[1
]}

机构：

[1] STANFORD UNIV,EL GINZTON LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.104612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of the Sb-terminated Si(100) surface has been studied by scanning tunneling microscopy. The images show that the surface is terminated in a symmetric Sb dimer structure. The long-range order of the Sb-terminated surface is broken up by a high density of antiphase domain boundaries which accounts for the low intensity of the half-order spots in the 2 x 1 low-energy electron diffraction pattern. Images on single-domain Si(100) substrates demonstrate that the Sb grows as an additional layer of dimers, rather than substituting for the topmost layer of Si dimers.

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页码：475 / 477

页数：3

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