共 38 条
[1]
REMOVAL OF SURFACE RELAXATION OF CU(110) BY HYDROGEN ADSORPTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1987, 5 (04)
:782-786
[3]
INTERFACE FORMATION OF GAAS WITH SI(100), SI(111), AND GE(111) - CORE-LEVEL SPECTROSCOPY FOR MONOLAYER COVERAGES OF GAAS, GA, AND AS
[J].
PHYSICAL REVIEW B,
1987, 36 (18)
:9569-9580
[4]
SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS
[J].
PHYSICAL REVIEW B,
1986, 34 (10)
:7447-7450
[5]
NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1976, 14 (02)
:556-582
[6]
ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GAAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
[J].
PHYSICAL REVIEW B,
1983, 27 (08)
:4770-4778
[7]
CORE-LEVEL PHOTOEMISSION-STUDIES OF SURFACES, INTERFACES, AND OVERLAYERS
[J].
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES,
1988, 14 (03)
:269-317
[8]
ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS
[J].
PHYSICAL REVIEW B,
1980, 21 (08)
:3513-3522
[10]
EASTMAN DE, 1981, PHYS REV B, V24, P3647, DOI 10.1103/PhysRevB.24.3647