SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE AND SCANNING TUNNELING MICROSCOPY OF SI(001)2X1-SB

被引：141

作者：

RICHTER, M

WOICIK, JC

NOGAMI, J

PIANETTA, P

MIYANO, KE

BASKI, AA

KENDELEWICZ, T

BOULDIN, CE

SPICER, WE

QUATE, CF

LINDAU, I

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899

[2] EDWARD L GINZTON LAB,STANFORD,CA 94305

[3] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 27期

关键词：

D O I：

10.1103/PhysRevLett.65.3417

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Surface extended-x-ray-absorption fine structure (SEXAFS) has been combined with scanning tunneling microscopy (STM) to determine both the local and long-range bonding properties of the Si(001)2 x 1-Sb interface. Sb L3 edge SEXAFS shows that Sb dimers occupy a modified bridge site on the Si(001) surface with a Sb-Sb near-neighbor distance of 2.88 +/- 0.03 angstrom. Each Sb atom of the dimer is bonded to two Si atoms with a Sb-Si bond length of 2.63 +/- 0.04 angstrom. STM resolves the dimer structure and provides the long-range periodicity of the surface. Low-energy-electron diffraction of vicinal Si(001) shows that the Sb dimer chains run perpendicular to the original Si dimer chains.

引用

页码：3417 / 3420

页数：4

共 14 条

[1] ARSENIC-TERMINATED SILICON AND GERMANIUM SURFACES STUDIED BY SCANNING TUNNELLING MICROSCOPY [J].