EPITAXIAL-GROWTH OF SILICON ON SI(001) BY SCANNING TUNNELING MICROSCOPY

被引：152

作者：

HAMERS, RJ

KOHLER, UK

DEMUTH, JE

机构：

[1] IBM Watson Research Center, New York 10598

[2] Institut für Festkörperforschung, Universität Hannover, Hannover 3000

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.577063

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The epitaxial growth of silicon on Si(001)-(2x 1) substrates at temperatures between 580 and 850 K is studied using scanning tunneling microscopy (STM). The growth is strongly anisotropic, forming long narrow structures only a few dimers wide but more than 100 A long. Models are proposed for the two types of antiphase boundaries that are observed on the epitaxially grown surfaces. © 1990, American Vacuum Society. All rights reserved.

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页码：195 / 200

页数：6

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