INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：182

作者：

SAKAMOTO, T

KAWAI, NJ

NAKAGAWA, T

OHTA, K

KOJIMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：617 / 619

页数：3

共 9 条

[1] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM
GRONWALD, KD
HENZLER, M
[J]. SURFACE SCIENCE, 1982, 117 (1-3) : 180 - 187
[2] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[3] HARRIS JJ, 1981, SURF SCI, V108, pL444, DOI 10.1016/0039-6028(81)90440-4
[4] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
LEWIS, BF
LEE, TC
GRUNTHANER, FJ
MADHUKAR, A
FERNANDEZ, R
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 419 - 424
[5] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
NORTON, N
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8
[6] WELL DEFINED SUPERLATTICE STRUCTURES MADE BY PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATIONS
SAKAMOTO, T
FUNABASHI, H
OHTA, K
NAKAGAWA, T
KAWAI, NJ
KOJIMA, T
BANDO, Y
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) : 347 - 352
[7] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION
SAKAMOTO, T
FUNABASHI, H
OHTA, K
NAKAGAWA, T
KAWAI, NJ
KOJIMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L657 - L659
[8] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746
[9] RED INTENSITY OSCILLATIONS DURING MBE OF GAAS
WOOD, CEC
[J]. SURFACE SCIENCE, 1981, 108 (02) : L441 - L443

← 1 →