Channeling as a mechanism for dry etch damage in GaN

被引：30

作者：

Haberer, ED ^{[1
]}

Chen, CH

Abare, A

Hansen, M

Denbaars, S

Coldren, L

Mishra, U

Hu, EL

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Etch damage of GaN was investigated using a quantum-well probe structure. A clear decrease in photoluminescence (PL) intensity was observed and was aggravated with increasing ion-beam voltage. The magnitude of decrease in PL intensity was much larger than expected, even greater than for GaAs subjected to similar etch conditions. Angle-dependent bombardment studies were carried out to investigate channeling as a damage mechanism in GaN. The large decrease in PL intensity observed near normal incidence or along the [0001] direction suggests that channeling is a damage mechanism for low-energy bombardment in GaN. (C) 2000 American Institute of Physics. [S0003-6951(00)05426-7].

引用

页码：3941 / 3943

页数：3

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