ENERGY-DEPENDENCE AND DEPTH DISTRIBUTION OF DRY ETCHING-INDUCED DAMAGE IN III/V SEMICONDUCTOR HETEROSTRUCTURES

被引：81

作者：

GERMANN, R ^{[1
]}

FORCHEL, A ^{[1
]}

BRESCH, M ^{[1
]}

MEIER, HP ^{[1
]}

机构：

[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1475 / 1478

页数：4

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