ION-IMPLANTATION INTO GALLIUM-ARSENIDE

被引：46

作者：

ANHOLT, R

BALASINGAM, P

CHOU, SY

SIGMON, TW

DEAL, M

机构：

[1] STANFORD UNIV,SOLID STATE ELECTR LAB,STANFORD,CA 94305

[2] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3429 / 3438

页数：10

共 33 条

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[3]

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[4]

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[8]

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[9] PLANAR CHANNELING EFFECTS IN SI(100) [J].

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[10]

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