MECHANISM OF EL2 EFFECTS ON GAAS FIELD-EFFECT TRANSISTOR THRESHOLD VOLTAGES

被引：1

作者：

ANHOLT, R

SIGMON, TW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3995 / 3997

页数：3

共 13 条

[1] MODEL OF THRESHOLD-VOLTAGE FLUCTUATIONS IN GAAS-MESFETS [J].

ANHOLT, R ;

SIGMON, TW .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) :16-18

[2]

CHEN CH, 1986, IEEE T ELECTRON DEV, V33, P792, DOI 10.1109/T-ED.1986.22570

[3] GAAS FIELD-EFFECT TRANSISTOR PROPERTIES, AS INFLUENCED BY THE LOCAL CONCENTRATIONS OF MIDGAP NATIVE DONORS AND DISLOCATIONS [J].

DOBRILLA, P ;

BLAKEMORE, JS ;

MCCAMANT, AJ ;

GLEASON, KR ;

KOYAMA, RY .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :602-604

[4] MAPPING OF GAAS WAFERS BY QUANTITATIVE INFRARED MICROSCOPY [J].

DOBRILLA, P ;

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1442-1448

[5]

KIRKPATRICK CG, 1984, GALLIUM ARSENIDE, pCH1

[6] COMPUTER SOLUTION OF ONE-DIMENSIONAL POISSONS EQUATION [J].

KLOPFENSTEIN, RW ;

WU, CP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) :329-333

[7]

KUHN KJ, 1986, IN PRESS SEMIINSULAT

[8] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J].

MAKRAMEBEID, S ;

GAUTARD, D ;

DEVILLARD, P ;

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :161-163

[9]

MORGAN DV, 1984, GALLIUM ARSENIDE, pCH5

[10] ELECTRICAL PROPERTY IMPROVEMENTS IN IN-DOPED DISLOCATION-FREE GAAS BY BULK ANNEALING [J].

OSAKA, J ;

HYUGA, F ;

WATANABE, K .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1307-1309

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