GAAS FIELD-EFFECT TRANSISTOR PROPERTIES, AS INFLUENCED BY THE LOCAL CONCENTRATIONS OF MIDGAP NATIVE DONORS AND DISLOCATIONS

被引：43

作者：

DOBRILLA, P ^{[1
]}

BLAKEMORE, JS ^{[1
]}

MCCAMANT, AJ ^{[1
]}

GLEASON, KR ^{[1
]}

KOYAMA, RY ^{[1
]}

机构：

[1] TRIQUINT SEMICOND INC,BEAVERTON,OR 97075

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：602 / 604

页数：3

共 15 条

[1]

Dobrilla P., 1984, Semi-Insulating III-V materials, P282

[2] EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE [J].

DOBRILLA, P ;

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :208-218

[3] THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFETS FABRICATED ON LEC-GROWN SEMI-INSULATING SUBSTRATES [J].

ISHII, Y ;

MIYAZAWA, S ;

ISHIDA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :800-804

[4] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J].

LAGOWSKI, J ;

KAMINSKA, M ;

PARSEY, JM ;

GATOS, HC ;

LICHTENSTEIGER, M .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1078-1080

[5] FLAW STATES IN PROCESSED GAAS, DETECTED BY PHOTOCONDUCTIVE AND PHOTO FIELD-EFFECT TECHNIQUES [J].

LEIGH, WB ;

BLAKEMORE, JS ;

KOYAMA, RY .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2721-2726

[6]

LEIGH WB, 1985, IEEE T ELECTRON DEVI, V32

[7] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[8] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

ELECTRONICS LETTERS, 1977, 13 (07) :191-193

[9] MANIFESTATIONS OF DEEP LEVELS POINT-DEFECTS IN GAAS [J].

MARTIN, GM ;

MAKRAMEBEID, S .

PHYSICA B & C, 1983, 116 (1-3) :371-383

[10] IMPROVEMENT OF CRYSTAL HOMOGENEITIES IN LIQUID-ENCAPSULATED CZOCHRALSKI GROWN, SEMI-INSULATING GAAS BY HEAT-TREATMENT [J].

MIYAZAWA, S ;

HONDA, T ;

ISHII, Y ;

ISHIDA, S .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :410-412

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