EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE

被引：73

作者：

DOBRILLA, P

BLAKEMORE, JS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：208 / 218

页数：11

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共 39 条

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[2] FACTORS AFFECTING THE SPATIAL-DISTRIBUTION OF THE PRINCIPAL MIDGAP DONOR IN SEMI-INSULATING GALLIUM-ARSENIDE WAFERS
BLAKEMORE, JS
DOBRILLA, P
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 204 - 207
[3] BLAKEMORE JS, 1982, SEMIINSULATING 3 5 M, P172
[4] DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS
BROZEL, MR
GRANT, I
WARE, RM
STIRLAND, DJ
SKOLNICK, MS
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1109 - 1118
[5] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS
BROZEL, MR
GRANT, I
WARE, RM
STIRLAND, DJ
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 610 - 612
[6] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
CLEGG, JB
NEWMAN, RC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
[7] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
VINCENT, G
DUBOIS
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5335 - 5359
[8] Dobrilla P., 1984, Semi-Insulating III-V materials, P282
[9] Duseaux M., 1984, Semi-Insulating III-V materials, P118
[10] INVESTIGATION OF THE ABSORPTION OF CR2+(3D4) IN GAAS
HENNEL, AM
SZUSZKIEWICZ, W
BALKANSKI, M
MARTINEZ, G
CLERJAUD, B
[J]. PHYSICAL REVIEW B, 1981, 23 (08): : 3933 - 3942

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