FACTORS AFFECTING THE SPATIAL-DISTRIBUTION OF THE PRINCIPAL MIDGAP DONOR IN SEMI-INSULATING GALLIUM-ARSENIDE WAFERS

被引:9
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BLAKEMORE, JS
DOBRILLA, P
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10.1063/1.336280
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O59 [应用物理学];
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页码:204 / 207
页数:4
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[1]  
BLUNT RT, 1982, SEMIINSULATING 3 5 M, P107
[2]   DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS [J].
BROZEL, MR ;
GRANT, I ;
WARE, RM ;
STIRLAND, DJ ;
SKOLNICK, MS .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1109-1118
[3]  
Dobrilla P., 1984, Semi-Insulating III-V materials, P282
[4]   EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE [J].
DOBRILLA, P ;
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :208-218
[5]  
DOBRILLA P, UNPUB
[6]  
Duseaux M., 1984, Semi-Insulating III-V materials, P118
[7]   LASER SCANNING TECHNIQUE FOR THE DETECTION OF RESISTIVITY AND LIFETIME INHOMOGENEITIES IN SEMICONDUCTOR-DEVICES [J].
ENGSTROM, O ;
DRUGGE, B ;
TOVE, PA .
PHYSICA SCRIPTA, 1978, 18 (06) :357-363
[8]   DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].
GRABMAIER, JG ;
WATSON, CB .
PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+
[9]   CONTOUR MAPS OF EL2 DEEP LEVEL IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].
HOLMES, DE ;
CHEN, RT .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3588-3594
[10]   SYMMETRICAL CONTOURS OF DEEP LEVEL EL2 IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
HOLMES, DE ;
CHEN, RT ;
ELLIOTT, KR ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :305-307