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CONTOUR MAPS OF EL2 DEEP LEVEL IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS
被引:43
作者
:
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1984年
/ 55卷
/ 10期
关键词
:
D O I
:
10.1063/1.332951
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3588 / 3594
页数:7
相关论文
共 23 条
[1]
BONNET M, 1982, NOV P GAAS IC S NEW
[2]
DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS
BROZEL, MR
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND
BROZEL, MR
GRANT, I
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND
GRANT, I
WARE, RM
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND
WARE, RM
STIRLAND, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND
STIRLAND, DJ
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(07)
: 610
-
612
[3]
CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
BROZEL, MR
CLEGG, JB
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
CLEGG, JB
NEWMAN, RC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
NEWMAN, RC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1978,
11
(09)
: 1331
-
1339
[4]
DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(01)
: 111
-
124
[5]
CHEN RT, 1983, JUL EL MAT C BURL
[6]
PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI
EDEN, RC
论文数:
0
引用数:
0
h-index:
0
EDEN, RC
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
WELCH, BM
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
ZUCCA, R
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1978,
13
(04)
: 419
-
426
[7]
STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
ELLIOTT, KR
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, KR
KIRKPATRICK, CG
论文数:
0
引用数:
0
h-index:
0
KIRKPATRICK, CG
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(01)
: 46
-
48
[8]
SYMMETRICAL CONTOURS OF DEEP LEVEL EL2 IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
ELLIOTT, KR
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, KR
KIRKPATRICK, CG
论文数:
0
引用数:
0
h-index:
0
KIRKPATRICK, CG
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(03)
: 305
-
307
[9]
COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
HOLMES, DE
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
CHEN, RT
ELLIOTT, KR
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
ELLIOTT, KR
YU, PW
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
YU, PW
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1982,
30
(07)
: 949
-
955
[10]
HOLMES DE, 1982, SEMIINSULATING 3 5 M, P19
←
1
2
3
→
共 23 条
[1]
BONNET M, 1982, NOV P GAAS IC S NEW
[2]
DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS
BROZEL, MR
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND
BROZEL, MR
GRANT, I
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND
GRANT, I
WARE, RM
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND
WARE, RM
STIRLAND, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND
STIRLAND, DJ
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(07)
: 610
-
612
[3]
CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
BROZEL, MR
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
BROZEL, MR
CLEGG, JB
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
CLEGG, JB
NEWMAN, RC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
PHILIPS RES LABS, REDHILL RH1 5HA, SURREY, ENGLAND
NEWMAN, RC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1978,
11
(09)
: 1331
-
1339
[4]
DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
[J].
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(01)
: 111
-
124
[5]
CHEN RT, 1983, JUL EL MAT C BURL
[6]
PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI
EDEN, RC
论文数:
0
引用数:
0
h-index:
0
EDEN, RC
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
WELCH, BM
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
ZUCCA, R
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1978,
13
(04)
: 419
-
426
[7]
STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
ELLIOTT, KR
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, KR
KIRKPATRICK, CG
论文数:
0
引用数:
0
h-index:
0
KIRKPATRICK, CG
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(01)
: 46
-
48
[8]
SYMMETRICAL CONTOURS OF DEEP LEVEL EL2 IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
HOLMES, DE
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
CHEN, RT
ELLIOTT, KR
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, KR
KIRKPATRICK, CG
论文数:
0
引用数:
0
h-index:
0
KIRKPATRICK, CG
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(03)
: 305
-
307
[9]
COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY
HOLMES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
HOLMES, DE
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
CHEN, RT
ELLIOTT, KR
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
ELLIOTT, KR
YU, PW
论文数:
0
引用数:
0
h-index:
0
机构:
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
YU, PW
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1982,
30
(07)
: 949
-
955
[10]
HOLMES DE, 1982, SEMIINSULATING 3 5 M, P19
←
1
2
3
→