FLAW STATES IN PROCESSED GAAS, DETECTED BY PHOTOCONDUCTIVE AND PHOTO FIELD-EFFECT TECHNIQUES

被引：6

作者：

LEIGH, WB ^{[1
]}

BLAKEMORE, JS ^{[1
]}

KOYAMA, RY ^{[1
]}

机构：

[1] TEKTRONIX INC,BEAVERTON,OR 97077

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2721 / 2726

页数：6

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