SOME PROPERTIES OF SEMI-INSULATING AND SI-IMPLANTED GAAS

被引：13

作者：

BHATTACHARYA, PK ^{[1
]}

RHEE, JK ^{[1
]}

机构：

[1] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 05期

关键词：

D O I：

10.1149/1.2115769

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1152 / 1159

页数：8

相关论文

共 26 条

[1] CHARACTERIZATION OF IMPLANTED AND ANNEALED VAPOR-PHASE EPITAXIAL GAAS
BHATTACHARYA, PK
RHEE, JK
OWEN, SJT
YU, JG
SMITH, KK
KOYAMA, RY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7224 - 7231
[2] Blakemore J. S., 1980, Semi-Insulating III-V Materials, P29
[3] EVIDENCE FOR A SHALLOW LEVEL STRUCTURE IN THE BULK OF SEMI-INSULATING GAAS
CASTAGNE, M
BONNAFE, J
MANIFACIER, JC
FILLARD, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4894 - 4897
[4] Fairman R. D., 1980, Semi-Insulating III-V Materials, P83
[5] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
FAIRMAN, RD
CHEN, RT
OLIVER, JR
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 135 - 140
[6] FARBE E, 1970, CR ACAD SCI FRANCE B, V270, P848
[7] DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS
HURTES, C
BOULOU, M
MITONNEAU, A
BOIS, D
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 821 - 823
[8] IPPOLITOVA GK, 1976, SOV PHYS SEMICOND, V9, P864
[9] KANBER H, 1981, 23RD EL MAT C SANT B
[10] ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS
KITAHARA, K
NAKAI, K
SHIBATOMI, A
OHKAWA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5339 - 5344