EFFECT OF MICROSTRUCTURE ON THE ARSENIC PROFILE IN IMPLANTED SILICON

被引：1

作者：

COGHLAN, WA

RHEE, MH

WILLIAMS, JM

STREIT, LA

WILLIAMS, P

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE PHYS,OAK RIDGE,TN 37830

[2] ARIZONA STATE UNIV,DEPT CHEM,TEMPE,AZ 85287

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 16卷 / 2-3期

关键词：

D O I：

10.1016/0168-583X(86)90009-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：171 / 176

页数：6

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