DEEP LEVELS IN ARSENIC IMPLANTED SILICON

Defects induced by As implantation in n-type silicon and subsequent annealing by thermal (up to 800 degree C) and pulse (15 ns) ruby laser (with energies ranging from 8 to 40 MW cm** minus **2) treatments have been analyzed using Deep Level Transient Spectroscopy. The comparison between these two treatments shows that a laser pulse, working in the solid phase regime, causes a partial anneal of the implanted layer and, for energies of the order of 40 MW cm** minus **2, introduces defects characterized by an energy level at approximately equals 0. 29-0. 32 eV below the bottom of the conduction band.