RESIDUAL DISORDER IN SILICON AFTER ANNEAL OF HIGH-DOSE THROUGH OXIDE ARSENIC IMPLANTS

被引：1

作者：

HAGMANN, D

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90867-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：683 / 687

页数：5

共 9 条

[1] ANOMALOUS RESIDUAL DAMAGE IN SI AFTER ANNEALING OF THROUGH-OXIDE ARSENIC IMPLANTATIONS [J].

CASS, TR ;

REDDI, VGK .

APPLIED PHYSICS LETTERS, 1973, 23 (05) :268-270

[2] RESIDUAL DISORDER IN SI FROM OXYGEN RECOILS IN ANNEALED THROUGH OXIDE ARSENIC IMPLANTS [J].

CHU, WK ;

MULLER, H ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :297-299

[3]

DROSD RM, 1979, THESIS U CALIFORNIA, P20

[4] PRODUCTION OF RADIATION DEFECTS IN SILICON AT DIFFERENT TEMPERATURES [J].

GLASER, E ;

GOTZ, G ;

WESCH, W ;

FREY, H .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :19-24

[5]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[6] RESIDUAL LATTICE DAMAGE IN AS-IMPLANTED AND ANNEALED SI [J].

MADER, S ;

MICHEL, AE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :391-395

[7] ANOMALOUS RESIDUAL DEFECTS IN SILICON AFTER ANNEALING OF THROUGH OXIDE PHOSPHORUS IMPLANTED SAMPLES [J].

NATSUAKI, N ;

TAMURA, M ;

MIYAO, M ;

TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :47-51

[8]

Ryssel H., 1978, IONENIMPLANTATION

[9] ANNEALING CHARACTERISTICS OF HIGHLY P+-ION-IMPLANTED SILICON CRYSTAL - 2-STEP ANNEAL [J].

UDA, K ;

KAMOSHIDA, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :18-21

← 1 →