ION-IMPLANTATION FOR SEMICONDUCTOR PROCESSING

被引：4

作者：

JAIN, A

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 63卷 / 1-4期

关键词：

D O I：

10.1080/00337578208222823

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：39 / 46

页数：8

共 23 条

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[2]

ANTONIADIS D, 1978, SEL78020 STANF U

[3]

FARRINGTON D, 1977, HEWLETT-PACKARD J, V28, P5

[4]

FORDEMWALT JN, 1980, COMMUNICATION

[5] IMPLANTED SILICON VARACTOR FOR TV TUNER [J].

GUPTA, RP ;

ROY, AK ;

KHOKLE, WS ;

JAIN, A .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4) :61-65

[6]

GUPTA RP, 1980, COMMUNICATION

[7]

JAIN A, UNPUB

[8] ION-IMPLANTED SEMICONDUCTOR-DEVICES [J].

LEE, DH ;

MAYER, JW .

[9]

Maddox R. L., 1980, Microelectronics Journal, V11, P4, DOI 10.1016/S0026-2692(80)80275-8

[10] DESIGN AND EVALUATION OF ION-IMPLANTED CMOS STRUCTURES [J].

MOTAMEDI, ME ;

TAM, KY ;

STECKL, AJ .