PLANAR AND RESIDUAL CHANNELING OF SI+ IMPLANTS IN GAAS

被引：15

作者：

BLUNT, RT

DAVIES, P

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1015 / 1018

页数：4

共 17 条

[1]

BADAWI MH, UNPUB

[2]

Blunt R. T., 1986, Solid State Devices 1985. Invited Papers Presented at the 15th European Solid State Device Research Conference, P133

[3]

Blunt R. T., 1983, Ion Implantation: Equipment and Techniques. Proceedings of the Fourth International Conference, P443

[4] PLANAR CHANNELING EFFECTS IN SI(100) [J].

CURRENT, MI ;

TURNER, NL ;

SMITH, TC ;

CRANE, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :336-348

[5] PROCESS MODELING OF N-TYPE DOPING IN GALLIUM-ARSENIDE [J].

DHIMAN, JK ;

WANG, KL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2957-2961

[6] STUDY OF ELECTRICAL AND CHEMICAL PROFILES OF SI IMPLANTED IN SEMI-INSULATING GAAS SUBSTRATE ANNEALED UNDER SIO2 AND CAPLESS [J].

FENG, M ;

KWOK, SP ;

EU, V ;

HENDERSON, BW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2990-2993

[7] ION-IMPLANTED SILICON PROFILES IN GAAS [J].

LEE, DH ;

MALBON, RM .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :327-329

[8]

MCNALLY PJ, 1983, COMSAT TECH REV, V13, P437

[9]

MIYAKE M, 1983, J ELECTROCHEM SOC, V130, P718

[10]

MOLINE RA, 1971, ION IMPLANTATION SEM, P58

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