ION-IMPLANTED SILICON PROFILES IN GAAS

被引：29

作者：

LEE, DH ^{[1
]}

MALBON, RM ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 07期

关键词：

D O I：

10.1063/1.89386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：327 / 329

页数：3

共 13 条

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[7] CAPLESS ANNEALING OF ION-IMPLANTED GAAS [J].

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[8]

LEE DH, 1976, 5TH P INT ION IMPL C

[9] ANNEALING OF ION-IMPLANTED GAAS IN A CONTROLLED ATMOSPHERE [J].

MALBON, RM ;

LEE, DH ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) :1413-1415

[10] SECONDARY ION EMISSION FOR SURFACE AND IN-DEPTH ANALYSIS OF TANTALUM THIN-FILMS [J].

MORABITO, JM ;

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ANALYTICAL CHEMISTRY, 1973, 45 (06) :869-880

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