INVESTIGATION OF REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS-ALGAAS QUANTUM WELL STRUCTURES

被引：140

作者：

WONG, HF

GREEN, DL

LIU, TY

LISHAN, DG

BELLIS, M

HU, EL

PETROFF, PM

HOLTZ, PO

MERZ, JL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1906 / 1910

页数：5

共 21 条

[1]

[Anonymous], 1963, KGL DANSKE VIDENSKAB

[2] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J].

ASAKAWA, K ;

SUGATA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :402-405

[3] GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J].

ASAKAWA, K ;

SUGATA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L653-L655

[4] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].

BEAN, JC ;

BECKER, GE ;

PETROFF, PM ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[5]

Burenkov A.F., 1986, TABLES ION IMPLANTAT

[6] DIRECTIONAL REACTIVE-ION-ETCHING OF INP WITH CL-2 CONTAINING GASES [J].

COLDREN, LA ;

RENTSCHLER, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :225-230

[7]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[8] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .2. APPLICATIONS [J].

HARPER, JME ;

CUOMO, JJ ;

KAUFMAN, HR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :737-756

[9] SELECTIVE DRY ETCHING OF ALGAAS-GAAS HETEROJUNCTION [J].

HIKOSAKA, K ;

MIMURA, T ;

JOSHIN, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L847-L850

[10] REACTIVE ION ETCHING OF GAAS IN A CHLORINE PLASMA [J].

HU, EL ;

HOWARD, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :85-88

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