Theory of the electron mobility in n-type 6H-SiC

被引：18

作者：

Kinoshita, T

Itoh, KM

Schadt, M

Pensl, G

机构：

[1] Keio Univ, Dept Appl Phys & Physicoinformat, Yokohama, Kanagawa 2238522, Japan

[2] Univ Erlangen Nurnberg, Inst Angew Phys, D-91058 Erlangen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 12期

关键词：

D O I：

10.1063/1.370659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in n-type 6H-SiC. The model is based on the conduction band structure determined recently by a first-principle calculation. It provides explicit and easy to use analytical expressions for both drift and Hall mobilities. The calculation of the Hall mobility based on our model agrees very well with experimentally determined anisotropic Hall mobility in 6H-SiC. (C) 1999 American Institute of Physics. [S0021-8979(99)03512-4].

引用

页码：8193 / 8198

页数：6

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[2]

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