Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC

被引：19

作者：

Kinoshita, T

Itoh, KM

Muto, J

Schadt, M

Pensl, G

Takeda, K

机构：

[1] Keio Univ, Dept Instrumentat Engn, Kohoku Ku, Yokohama, Kanagawa 223, Japan

[2] Univ Erlangen Nurnberg, Inst Angew Phys, D-91058 Erlangen, Germany

[3] Waseda Univ, Dept Mat Sci & Engn, Shinjuku Ku, Tokyo 169, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

4H-SiC; 6H-SiC; hall effect; mobility; anisotropy;

D O I：

10.4028/www.scientific.net/MSF.264-268.295

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in single crystals of 6H- and 4H-SiC assuming parabolic conduction bands of cigar-shaped constant energy surfaces having three different effective masses in directions perpendicular to each other. Our results agree well with the experimentally determined anisotropic Hall mobility in 6H- and 4H-SiC.

引用

页码：295 / 298

页数：4

共 14 条

[1]

[Anonymous], 1955, ADV ELECT ELECT PHYS, DOI DOI 10.1016/S0065-2539(08)60957-9

[2] Physical properties of SiC [J].