Using pulsed direct current power for reactive sputtering of AL2O3

被引:65
作者
Belkind, A [1 ]
Freillich, A
Scholl, R
机构
[1] Stevens Inst Technol, Hoboken, NJ 07030 USA
[2] Adv Energy Ind, Ft Collins, CO 80525 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 04期
关键词
D O I
10.1116/1.581706
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Application of steady direct current (DC) power to the reactive sputtering of dielectrics such as Al2O3 is seriously hampered by arcing. This arcing can be alleviated to a great extent when pulsed de power is applied. By pulsed de power we mean that the power is applied for a short "on" period, and then removed for a short "off" period. During the "off" period the plasma can discharge the surfaces, provided certain conditions are met. The dependence of adequate discharging, and thus are prevention, on the duration of the "on" and "off" periods is examined. In addition, the dynamics of plasma density loss in the "off" period and its reestablishment in the initial part of the "on" period are discussed. Reactive sputtering takes place only during the "on" period, and part of this period is lost for effective sputtering due to the time required for full plasma reestablishment: This produces a dependence of the deposition rate on both the duty cycle and the frequency of pulsing, but not on the power consumed. This dependence is examined and the power efficiencies of alternating current and pulsed power de reactive sputtering ate compared and the differences between: single and dual cathode systems in published results is discussed. (C) 1999 American Vacuum Society. [S0734-2101(99)06704].
引用
收藏
页码:1934 / 1940
页数:7
相关论文
共 32 条
[1]   MAGNETIC BIASING EFFECTS WHILE USING AN UNBALANCED PLANAR MAGNETRON [J].
BELKIND, A ;
ORBAN, Z .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (03) :642-646
[2]  
BELKIND A, IN PRESS SURF COAT T
[3]  
Bingsen H., 1992, SURF COAT TECH, V50, P111
[4]   OXYGEN AND FLUORINE ATOM KINETICS IN ELECTRON-CYCLOTRON RESONANCE PLASMAS BY TIME-RESOLVED ACTINOMETRY [J].
BOOTH, JP ;
SADEGHI, N .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) :611-620
[5]  
CORMIA RL, 1977, Patent No. 4046659
[6]   A QUASI-DIRECT-CURRENT SPUTTERING TECHNIQUE FOR THE DEPOSITION OF DIELECTRICS AT ENHANCED RATES [J].
ESTE, G ;
WESTWOOD, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1845-1848
[7]  
ESTE GO, 1998, 98 1 REACTIVE SPUTTE
[8]   The deposition of hard crystalline Al2O3 layers by means of bipolar pulsed magnetron sputtering [J].
Fietzke, F ;
Goedicke, K ;
Hempel, W .
SURFACE & COATINGS TECHNOLOGY, 1996, 86-7 (1-3) :657-663
[9]  
Freilich A., 1998, 41 ANN TECHN C P BOS, P321
[10]   INFLUENCE OF THE PLASMA ON SUBSTRATE HEATING DURING LOW-FREQUENCY REACTIVE SPUTTERING OF ALN [J].
GLOCKER, DA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (06) :2989-2993