Realization and characterization of 8 x 8 resonant cavity LED arrays mounted onto CMOS drivers for POF-based interchip interconnections

被引:27
作者
Bockstaele, R [1 ]
Coosemans, T
Sys, C
Vanwassenhove, L
Van Hove, A
Dhoedt, B
Moerman, I
Van Daele, P
Baets, RG
Annen, R
Melchior, H
Hall, J
Heremans, PL
Brunfaut, M
Van Campenhout, J
机构
[1] Univ Ghent, INTEC, Dept Informat Technol, IMEC, B-9000 Ghent, Belgium
[2] GEC Marconi Mat Technol Ltd, Towcester NN12 8EQ, Northants, England
[3] IMEC, MAP, B-3001 Heverlee, Belgium
[4] Univ Ghent, Dept Elect & Informat Syst, B-9000 Ghent, Belgium
[5] ETH Honggerberg, Swiss Fed Inst Technol, ETHZ Micro & Optoelect Lab, CH-8093 Zurich, Switzerland
关键词
driver circuits; light-emitting diodes; optical interconnections; resonant cavity;
D O I
10.1109/2944.778294
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An 8 x 8 array of resonant-cavity light-emitting diodes (RCLED's) emitting at 980 nm and flip-chip mounted onto complimentary metal-oxide-semiconductor (CMOS) integrated drivers, is presented. The RCLED's are optimized for maximal extraction efficiency into the numerical aperture of polymer optical fibers (N A = 0.5) and minimal optical crosstalk, Design of the optimal cavity structure is presented, and 8 x 8 arrays are realized and mounted directly onto standard CMOS chips using a solder reflow technique. The CMOS integrated drivers are designed for high-speed operation and low-power consumption, and are realized in 0.8 and 0.6-mu m CMOS technology. The electrooptical modules have been realized and characterized, and over 50-mu W optical power coupled to POF at 3-mA drive current is reported. Open eye diagrams at operation speed up to 250 Mb/s are presented. These characteristics are compatible with CMOS integrated low-power receivers.
引用
收藏
页码:224 / 235
页数:12
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