Independently addressable VCSEL arrays on 3-μm pitch

被引：17

作者：

Chua, CL ^{[1
]}

Thornton, RL ^{[1
]}

Treat, DW ^{[1
]}

Donaldson, RM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 07期

关键词：

oxide aperture; semiconductor device fabrication; semiconductor laser arrays; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/68.681269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an exceedingly dense linear vertical-cavity surface-emitting laser (VCSEL) array with independently addressable elements on a staggered 3-mu m pitch. Our devices utilize an all-epitaxial structure and operate at a wavelength of 813 nm with threshold currents below 400 mu A. The high-packing density is enabled by combining transparent contact technology with a planar laterally oxidized device architecture, The array exhibits low interelement thermal crosstalk and has electrical resistances of 3 M Omega between adjacent array elements.

引用

页码：917 / 919

页数：3

共 7 条

[1] Indium tin oxide transparent electrodes for broad-area top-emitting vertical-cavity lasers fabricated using a single lithography step [J].