SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH 50-PERCENT POWER CONVERSION EFFICIENCY

被引：292

作者：

LEAR, KL

CHOQUETTE, KD

SCHNEIDER, RP

KILCOYNE, SP

GEIB, KM

机构：

[1] Sandia National Laboratories, Photonics Research Department 1312, Albuquerque, NM 87185-0603

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 03期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; LASERS;

D O I：

10.1049/el:19950125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an ail epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage. a 78% slope efficiency, and a 350 mu A threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2 mA drive current. The device operates in a single mode up to 1.5 mW.

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收藏

页码：208 / 209

页数：2

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