ANOMALOUS TEMPORAL RESPONSE OF GAIN GUIDED SURFACE EMITTING LASERS

被引：66

作者：

DUTTA, NK

TU, LW

HASNAIN, G

ZYDZIK, G

WANG, YH

CHO, AY

机构：

[1] AT&T Bell Laboratories, New Jersey 07974, Murray Hill

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 03期

关键词：

LASERS; SEMICONDUCTOR LASERS; PULSE GENERATION;

D O I：

10.1049/el:19910135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Under pulsed operation, gain guided surface emitting lasers have exhibited long delay times and higher threshold current than for CW operation. This phenomenon is explained by assuming that adiabatic heating of the active region results in time evolution of the transverse mode guiding. Our theory suggests that a built in index guiding greater than 10(-2) will stabilise the fundamental mode and improve the temporal performance of surface emitting lasers.

引用

页码：208 / 210

页数：3

共 10 条

[1] CASEY HC, 1978, HETEROSTRUCTURE LA B
[2] ANALYSIS OF CURRENT SPREADING, CARRIER DIFFUSION, AND TRANSVERSE-MODE GUIDING IN SURFACE EMITTING LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 1961 - 1963
[3] CONTINUOUS WAVE TOP SURFACE EMITTING QUANTUM-WELL LASERS USING HYBRID METAL-SEMICONDUCTOR REFLECTORS
HASNAIN, G
TAI, K
WYNN, JD
WANG, YH
FISCHER, RJ
HONG, M
WEIR, BE
ZYDZIK, GJ
MANNAERTS, JP
GAMELIN, J
CHO, AY
[J]. ELECTRONICS LETTERS, 1990, 26 (19) : 1590 - 1592
[4] Iga K., 1988, Optoelectronics - Devices and Technologies, V3, P131
[5] GAAS SURFACE EMITTING LASERS WITH CIRCULAR BURIED HETEROSTRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION AND TWO-DIMENSIONAL LASER ARRAY
KOYAMA, F
TOMOMATSU, K
IGA, K
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 528 - 529
[6] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SINGLE-QUANTUM-WELL MICROLASER DIODES
LEE, YH
JEWELL, JL
SCHERER, A
MCCALL, SL
HARBISON, JP
FLOREZ, LT
[J]. ELECTRONICS LETTERS, 1989, 25 (20) : 1377 - 1378
[7] THEORY ON LONG-TIME DELAYS AND INTERNAL Q SWITCHING IN GAAS JUNCTION LASERS
NUNES, FD
PATEL, NB
RIPPER, JE
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 675 - 681
[8] LONG DELAY TIME FOR LASING IN VERY NARROW GRADED BARRIER SINGLE-QUANTUM-WELL LASERS
PRINCE, FC
PATEL, NB
KASEMSET, D
HONG, CS
[J]. ELECTRONICS LETTERS, 1983, 19 (12) : 435 - 437
[9] WILLARDSON RK, 1966, SEMICONDUCT SEMIMET, V2, P52
[10] HIGH-POWER VERTICAL-CAVITY SURFACE-EMITTING ALGAAS/GAAS DIODE-LASERS
ZINKIEWICZ, LM
ROTH, TJ
MAWST, LJ
TRAN, D
BOTEZ, D
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (20) : 1959 - 1961

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