LONG DELAY TIME FOR LASING IN VERY NARROW GRADED BARRIER SINGLE-QUANTUM-WELL LASERS

被引：7

作者：

PRINCE, FC

PATEL, NB

KASEMSET, D

HONG, CS

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13100 CAMPINAS,SP,BRAZIL

[2] ROCKWELL INT CORP,CTR MICROELECTR RES & DEV,THOUSAND OAKS,CA 91360

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 12期

关键词：

D O I：

10.1049/el:19830298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：435 / 437

页数：3

共 10 条

[1] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT
BURNHAM, RD
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PAOLI, TL
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[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1095 - 1097
[2] Carslaw H. S., 1959, CONDUCTION HEAT SOLI, P75
[3] HERSEE D, 1982, ELECTRON LETT, V18, P870
[4] VERY NARROW GRADED-BARRIER SINGLE QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KASEMSET, D
HONG, CS
PATEL, NB
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 912 - 914
[5] MODE GUIDANCE PARALLEL TO JUNCTION PLANE OF DOUBLE-HETEROSTRUCTURE GAAS LASERS
NASH, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4696 - 4707
[6] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS
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SOBERS, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6103 - 6108
[7] THEORY ON LONG-TIME DELAYS AND INTERNAL Q SWITCHING IN GAAS JUNCTION LASERS
NUNES, FD
PATEL, NB
RIPPER, JE
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 675 - 681
[8] WAVEGUIDING IN A STRIPE-GEOMETRY JUNCTION LASER
PAOLI, TL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 662 - 668
[9] EFFECTS OF LATERAL CURRENT SPREADING, CARRIER OUT-DIFFUSION, AND OPTICAL-MODE LOSSES ON THRESHOLD CURRENT-DENSITY OF GAAS-ALXGA1-XAS STRIPE-GEOMETRY DH LASERS
TSANG, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1031 - 1044
[10] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788

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