ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS OXIDE-GAAS DISTRIBUTED BRAGG REFLECTORS

被引：98

作者：

MACDOUGAL, MH

DAPKUS, PD

PUDIKOV, V

ZHAO, HM

YANG, GM

机构：

[1] Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 03期

关键词：

D O I：

10.1109/68.372729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electrically-pumped, vertical-cavity, surface-emitting laser (VCSEL) using an AIAs oxide-GaAs DBR above the AlGaAs-GaAs-InGaAs gain region and a conventional AlAs-GaAs DBR below is described, By selective oxidation, devices with current flow apertures of different areas are fabricated, and in 8-mu m-square devices, threshold currents as low as 0.22 mA are achieved, Being the first electrically-pumped VCSEL to utilize the oxide-based DBR, it demonstrates that the oxide-based DBR is of sufficient quality to realize submilliampere threshold currents.

引用

页码：229 / 231

页数：3

共 12 条

[1] METHOD FOR ACCURATE GROWTH OF VERTICAL-CAVITY SURFACE-EMITTING LASERS
CHALMERS, SA
KILLEEN, KP
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1182 - 1184
[2] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES
DALLESASSE, JM
HOLONYAK, N
SUGG, AR
RICHARD, TA
ELZEIN, N
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (26) : 2844 - 2846
[3] INSITU LASER REFLECTOMETRY APPLIED TO THE GROWTH OF ALXGA1-XAS BRAGG REFLECTORS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FRATESCHI, NC
HUMMEL, SG
DAPKUS, PD
[J]. ELECTRONICS LETTERS, 1991, 27 (02) : 155 - 157
[4] TRANSVERSE-MODE BEHAVIOR IN NATIVE-OXIDE-DEFINED LOW-THRESHOLD VERTICAL-CAVITY LASERS
HUFFAKER, DL
DEPPE, DG
ROGERS, TJ
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (13) : 1611 - 1613
[5] NATIVE-OXIDE DEFINED RING CONTACT FOR LOW-THRESHOLD VERTICAL-CAVITY LASERS
HUFFAKER, DL
DEPPE, DG
KUMAR, K
ROGERS, TJ
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (01) : 97 - 99
[6] MODE DEPENDENCE ON MIRROR CONTRAST IN FABRY-PEROT MICROCAVITY LASERS
HUFFAKER, DL
LIN, CC
DEPPE, DG
STREETMAN, BG
ROGERS, TJ
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (02) : 135 - 138
[7] HUMMERL SG, 1993, UNPUB
[8] WIDE-BANDWIDTH DISTRIBUTED BRAGG REFLECTORS USING OXIDE GAAS MULTILAYERS
MACDOUGAL, MH
ZHAO, H
DAPKUS, PD
ZIARI, M
STEIER, WH
[J]. ELECTRONICS LETTERS, 1994, 30 (14) : 1147 - 1149
[9] PHOTOPUMPED ROOM-TEMPERATURE EDGE-CAVITY AND VERTICAL-CAVITY OPERATION OF ALGAAS-GAAS-INGAAS QUANTUM-WELL HETEROSTRUCTURE LASERS UTILIZING NATIVE-OXIDE MIRRORS
RIES, MJ
RICHARD, TA
MARANOWSKI, SA
HOLONYAK, N
CHEN, EI
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (06) : 740 - 742
[10] MODELING TEMPERATURE EFFECTS AND SPATIAL HOLE-BURNING TO OPTIMIZE VERTICAL-CAVITY SURFACE-EMITTING LASER PERFORMANCE
SCOTT, JW
GEELS, RS
CORZINE, SW
COLDREN, LA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (05) : 1295 - 1308

← 1 2 →