PHOTOPUMPED ROOM-TEMPERATURE EDGE-CAVITY AND VERTICAL-CAVITY OPERATION OF ALGAAS-GAAS-INGAAS QUANTUM-WELL HETEROSTRUCTURE LASERS UTILIZING NATIVE-OXIDE MIRRORS

被引：40

作者：

RIES, MJ ^{[1
]}

RICHARD, TA ^{[1
]}

MARANOWSKI, SA ^{[1
]}

HOLONYAK, N ^{[1
]}

CHEN, EI ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.112216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the 300-K continuous and pulsed photopumped laser operation of AlyGa1-yAs-GaAs-InxGa1-xAs quantum-well heterostructure (QWH) crystals that utilize large-index-step high-contrast distributed Bragg reflector mirrors. The mirrors are formed by selective lateral oxidation (H2O+N2, 425-degrees-C) of three lower and three upper AlAs layers in the structure, resulting in enhanced cavity Q in the vertical direction. The laterally oxidized mirrors, a small lower and an upper ''stack'' that sandwich a lateral waveguide and double QW active region, are of sufficient quality to permit vertical-cavity laser operation of the QWH crystals.

引用

页码：740 / 742

页数：3

共 15 条

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