INSITU LASER REFLECTOMETRY APPLIED TO THE GROWTH OF ALXGA1-XAS BRAGG REFLECTORS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：30

作者：

FRATESCHI, NC ^{[1
]}

HUMMEL, SG ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 02期

关键词：

LASER APPLICATIONS;

D O I：

10.1049/el:19910100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser reflectometry has been applied as an in situ growth monitoring tool for the MOCVD growth of Bragg reflectors. Reproducible accuracy of 4 nm of the stop band centre was achieved for AlAs/GaAs mirrors. AlGaAs/AlAs mirrors requiring in situ composition calibration were also successfully grown.

引用

页码：155 / 157

页数：3

共 5 条

[1] LOW-THRESHOLD ELECTRICALLY PUMPED VERTICAL-CAVITY SURFACE-EMITTING MICROLASERS
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[4] PRECISION ALGAAS BRAGG REFLECTORS FABRICATED BY PHASE-LOCKED EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2493 - 2495
[5] EFFECTS OF LAYER THICKNESS VARIATIONS ON VERTICAL-CAVITY SURFACE-EMITTING DBR SEMICONDUCTOR-LASERS
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MALLOY, K
WANG, S
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (03) : 162 - 164

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