INSITU GROWTH-RATE MEASUREMENTS DURING MOLECULAR-BEAM EPITAXY USING AN OPTICAL-PYROMETER

被引：52

作者：

SPRINGTHORPE, AJ

HUMPHREYS, TP

MAJEED, A

MOORE, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 20期

关键词：

D O I：

10.1063/1.102082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2138 / 2140

页数：3

共 14 条

[1]

Behrndt K. H., 1963, 10 T NAT VAC S, P379

[2]

CARDONA M, 1960, 1960 INT C SEM PHYS, P388

[3] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].

CASEY, HC ;

SELL, DD ;

WECHT, KW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257

[4] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV [J].

CASEY, HC ;

SELL, DD ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :63-65

[5] THERMAL EXPANSION OF ALAS [J].

ETTENBERG, M ;

PAFF, RJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3926-+

[6]

HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[7]

KOHRBRUCK R, 1989, APPL PHYS LETT, V54, P623, DOI 10.1063/1.100898

[8] ELIMINATION OF FLUX TRANSIENTS IN MOLECULAR-BEAM EPITAXY [J].

MAKI, PA ;

PALMATEER, SC ;

CALAWA, AR ;

LEE, BR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :564-567

[9]

PANISH MB, COMMUNICATION

[10] COEFFICIENT OF EXPANSION OF GAAS GAP AND GA(AS P) COMPOUNDS FROM -62 DEGREES TO 200 DEGREES C [J].

PIERRON, ED ;

PARKER, DL ;

MCNEELY, JB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4669-&

← 1 2 →