ELIMINATION OF FLUX TRANSIENTS IN MOLECULAR-BEAM EPITAXY

被引:13
作者
MAKI, PA
PALMATEER, SC
CALAWA, AR
LEE, BR
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
关键词
D O I
10.1116/1.583374
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:564 / 567
页数:4
相关论文
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LUSCHER, PE ;
COLLINS, DM .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :15-32
[2]   ELIMINATION OF FLUX TRANSIENTS IN MOLECULAR-BEAM EPITAXY [J].
MAKI, PA ;
PALMATEER, SC ;
CALAWA, AR ;
LEE, BR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2813-2814
[3]  
PLOOG K, 1980, CRYSTAL GROWTH PROPE, V3
[4]  
SCHAFF W, 1985, THESIS CORNELL U