DESIGN CONSIDERATIONS FOR MOLECULAR-BEAM EPITAXY SYSTEMS

被引:19
作者
LUSCHER, PE
COLLINS, DM
机构
[1] Varian Associates Inc., Palo Alto
来源
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1979年 / 2卷 / 1-2期
关键词
D O I
10.1016/0146-3535(81)90023-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Important factors which must be considered in the design of a molecular beam epitaxy (MBE) system are addressed. Vacuum system requirements are discussed with regard to film purity levels. The important factors involved in the design of molecular beam sources (flux uniformity, crucible volume, temperature stability and reproducibility, furnace and crucible materials, heat shielding, source baffling, and shutters) and substrate holders (temperature stability, reproducibility, and uniformity, and the mounting of substrates with liquid metal films) are investigated. The use of in situ analytical equipment (e.g. reflection electron diffraction, quadrupole mass spectroscopy, and Auger electron spectroscopy) is discussed and the importance of these techniques in both experimental and production MBE systems is evaluated. © 1981.
引用
收藏
页码:15 / 32
页数:18
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