PRECISION ALGAAS BRAGG REFLECTORS FABRICATED BY PHASE-LOCKED EPITAXY

被引：24

作者：

WALKER, JD ^{[1
]}

MALLOY, K ^{[1
]}

WANG, S ^{[1
]}

SMITH, JS ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期

关键词：

D O I：

10.1063/1.102890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extremely high quality AlGaAs Bragg reflectors have been fabricated by molecular beam epitaxy using advanced growth techniques including phase-locked epitaxy, short-period superlattices, and growth interruptions. These techniques are used to control the layer periodicity, interface flatness, and producibility of the structures. The experimental reflectance spectrum shows an extremely square stop band and very regular side lobes closely matching the theoretical spectrum. A comparison of experimental to theoretical reflectance spectra is used to show that the layer periodicity is maintained within 1% and the interface flatness controls the optical loss per interface to less than 0.1%. Experimental results show a maximum reflectance of 98.5% for a (AlAs) 6(GaAs)3/(AlAs)1(GaAs)4 35.5-period Bragg reflector.

引用

页码：2493 / 2495

页数：3

共 8 条

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