High H2 sensing performance of anodically oxidized TiO2 film contacted with Pd

被引:178
作者
Shimizu, Y [1 ]
Kuwano, N [1 ]
Hyodo, T [1 ]
Egashira, M [1 ]
机构
[1] Nagasaki Univ, Fac Engn, Dept Mat Sci & Engn, Nagasaki 8528521, Japan
关键词
anodically oxidized TiO2; nanaholes; Pd electrode; H-2; sensor; Schottky barrier; diode-type sensor;
D O I
10.1016/S0925-4005(01)01040-1
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
TiO2 films with nanoholes have been prepared by anodic oxidation of a Ti plate in a H2SO4 solution. The TiO2 film sensor equipped with Pd and Ti electrodes exhibited a diode-type current-voltage characteristic in air, but nearly ohmic behavior in H, balanced with dry air. The sensor showed quick response to H-2 in dry air with high sensitivity, especially at 250 degreesC under a reverse bias voltage of 0.1 V. Reversible response to H-2 was also achieved in N-2, while the sensitivity decreased from that in air, The high H-2 sensitivity in air is suggested to arise partly from the change in the height of the Schottky barrier at the interface between Pd and TiO2, and H atoms formed by dissociative adsorption of H-2 at the Pd surface arc assumed to play an important role in the H-2 sensing properties. The sensor was less sensitive to CO, but water vapor interfered with the H-2 sensitivity. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:195 / 201
页数:7
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