Crystalline boron nanowires

被引:183
作者
Otten, CJ
Lourie, OR
Yu, MF
Cowley, JM
Dyer, MJ
Ruoff, RS
Buhro, WE [1 ]
机构
[1] Washington Univ, Dept Chem, St Louis, MO 63130 USA
[2] Washington Univ, Dept Phys, St Louis, MO 63130 USA
[3] Zyvex Corp, Richardson, TX 75081 USA
[4] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[5] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA
关键词
D O I
10.1021/ja017817s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ideal nanowire interconnects for nanoelectronics will be refractory, covalently bonded, and highly conductive, irrespective of crystallographic orientation. Theoretical studies suggest that boron nanotubes should be stable and exhibit higher electrical conductivities than those of carbon nanotubes. We describe CVD growth of elemental boron nanowires, which are found to be dense nanowhiskers rather than nanotubes. Conductivity measurements establish that they are semiconducting, with electrical properties consistent with those of elemental boron. High conductivities should be achievable through doping. Copyright © 2002 American Chemical Society.
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页码:4564 / 4565
页数:2
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