A novel method of removing impurities from multilevel interconnect materials

被引：8

作者：

Fukuda, T ^{[1
]}

Yanazawa, H ^{[1
]}

机构：

[1] Assoc Super Adv Elect Technol, ASET, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 03期

关键词：

supercritical; CO2; low-k; dehydration; impurity removal; leakage current; I-V characteristics; C-V characteristics;

D O I：

10.1143/JJAP.43.936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel method of removing impurities from dielectric films has been developed. The removal of water and charges is accomplished by humidification and wet pretreatment followed by charge extraction with CO2 supercritical fluid (SCF). Films treated in this manner exhibit intrinsic properties, which are usually masked by moisture and impurities.

引用

页码：936 / 939

页数：4

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