Intrinsic gap states in semiconductor nanocrystals

被引：47

作者：

Sercel, PC ^{[1
]}

Efros, AL

Rosen, M

机构：

[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

[2] USN, Nanostruct Opt Sect, Res Lab, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.83.2394

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate the existence of intrinsic gap states in bare and capped semiconductor nanocrystals within multiband effective mass theory. These states originate from Shockley-like surface states which, in small nanocrystals, extend over the entire crystal volume, facilitating their observation in absorption as well as in photoluminescence. The conditions under which such intrinsic states might be observed are discussed in light of the theory developed and analysis of the band parameters of direct gap semiconductors.

引用

收藏

页码：2394 / 2397

页数：4

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