Dynamic ferromagnetic proximity effect in photoexcited semiconductors

被引：25

作者：

Bauer, GEW ^{[1
]}

Brataas, A

Tserkovnyak, Y

Halperin, BI

Zwierzycki, M

Kelly, PJ

机构：

[1] Delft Univ Technol, Kavli Inst NanoSci, NL-2628 CJ Delft, Netherlands

[2] Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway

[3] Harvard Univ, Lyman Lab Phys, Cambridge, MA 02138 USA

[4] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[5] Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands

[6] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.92.126601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long-time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between the semiconductor and the ferromagnet in spite of the existence of a Schottky barrier in equilibrium.

引用

页码：126601 / 1

页数：4