Growth and characterization of CuInxGa1-xTe2 used for photovoltaic conversion

被引：3

作者：

Benabdeslem, M ^{[1
]}

Bechiri, L ^{[1
]}

Benslim, N ^{[1
]}

Madjoubi, L ^{[1
]}

Hannech, EB ^{[1
]}

Zouiti, M ^{[1
]}

Nouet, G ^{[1
]}

机构：

[1] Univ Caen, CRISMAT, ISMRA, F-14050 Caen, France

来源：

SOLAR ENERGY | 2006年 / 80卷 / 02期

关键词：

ingot; fusion; film; lash evaporation; chalcopyrite; defect; photoluminescence;

D O I：

10.1016/j.solener.2005.06.016

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Bulk and thin films of CuIn0.75Ga0.25Te2 have been grown using respectively the scaled quartz ampoule and the flash evaporation techniques. X-ray diffraction results showed that the semiconductor has the chalcopyrite structure. The gaps of the materials were determined from optical measurements and found to be 0.99 and 1.14 eV, respectively for bulk and annealed films. Photoluminescence data showed a broad emission localised at 1.05 eV. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：196 / 200

页数：5