Gap density of states in CVD diamond films from photoconductivity and photoluminescence data

被引:16
作者
Rossi, MC
Salvatori, S
Galluzzi, F
机构
关键词
photoconductivity; diamond defects; photoluminescence; impurities;
D O I
10.1016/S0925-9635(96)00752-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spectral photoconductivity (PC) and photoluminescence (PL) have been used to investigate the nature and distribution of defect states in CVD-grown polycrystalline diamond films. PC measurements at 300 K reveal an onset close to 1 eV and two broad bands peaking at 2.2 and 3.6 eV, which are mainly attributed to photoionization of impurities, Transitions between localized energy levels are responsible for a PL vibronic band peaking at 1.68 eV. Excitation spectra monitored at this energy exhibit at 77 K a sharp resonance at 1.95 eV. Starting from these results a possible picture of the defect density distribution is suggested and a simple model for the electronic structure of the 1.68 eV optical center is proposed. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:712 / 716
页数:5
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