ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE DIAMOND FILMS ON SILICON

被引：24

作者：

DECESARE, G

SALVATORI, S

VINCENZONI, R

ASCARELLI, P

CAPPELLI, E

PINZARI, F

GALLUZZI, F

机构：

[1] CNR,IMAI,I-00016 ROME,ITALY

[2] UNIV MESSINA,FAC INGN,MESSINA,ITALY

来源：

DIAMOND AND RELATED MATERIALS | 1995年 / 4卷 / 5-6期

关键词：

POLYCRYSTALLINE DIAMOND FILMS; HEATED FILAMENT CVD; ELECTRICAL PROPERTIES; SCHOTTKY DIODE;

D O I：

10.1016/0925-9635(94)05294-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 degrees C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains.

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页码：628 / 631

页数：4

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